Thermal Behaviour of Three- Level Trench Gate IGBT Modules in PFC and PV Operation
نویسندگان
چکیده
The control of the power semiconductors in a three-level NPC topology employs a set of 12 control signals in total. A back-to-back two-level/three-level inverter has been built to circulate power performing arbitrary load conditions to analyse the thermal dissipation of the power semiconductors. This thermal analysis utilises an IR camera to perform an in-situ measurement and allows precise modelling of thermal and electrical parameters. Once this experimental platform has been calibrated, the loss on each semiconductor chip can be acquired and compared with the simulated results. Hence, tuning of the model parameters becomes possible. Marco Honsberg and Thomas Radke, Mitsubishi Electric Europe, Germany
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